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Novel physical phenomena in nano-scale structures have been revealed and are applied in lasers and optical amplifiers, light emitting diodes, photodiodes, memory devices, biological luminescence markers, etc. The application of quasi zero-dimensional quantum dots in electronics has led to novel semiconductor technology and device concepts as well as to essential improvement in device performances. These achievements and technological applications of modern electronics deal mainly with direct band gap semiconductors such as the materials found in the groups III-V (InAs, GaAs,) and II-VI (CdSe, ZnS). In the case of indirect band gap materials (Si, Ge, SiC) many fundamental facts and phenomena related to the nanocrystals and quantum dots are now at least qualitatively understood, but no comprehensive survey exists to guide newcomers to the field. This book tries to fill this gap. It focuses on the optical and electrical phenomena in nanocrystal structures of indirect band gap group IV materials (Si, Ge, SiC). This book is an attempt to review the modern existing information in published materials. In addition, it includes the scientific results obtained by the authors' team, related to the physics, technology, optical and electrical properties, and different applications of Si, Ge, and SiC nanocrystal and quantum dot structures. It may be incomplete as such a work in a rapidly progressing field necessarily will be.
Additional Information
| Publisher | American Scientific Publishers |
|---|---|
| Binding | Hardcover |
| Year | 2010 |
| Edition | 1st Edition |
| Pages | 300 |
| Author | T V Torchynska |